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SUD50N04-09H
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( Ω )
40 0.009 at V GS = 10 V
I D (A) c
50
Q g (Typ)
55
? TrenchFET ? Power MOSFETS
? 175 °C Junction Temperature
? High Threshold Voltage At High Temperature
RoHS
COMPLIANT
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
Ordering Information: SUD50N04-09H-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
40
± 20
Unit
V
Single Avalanche Energy
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
a
Power Dissipation
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 100 °C
L = 0.1 mH
T C = 25 °C
I D
I DM
I AS
E AS
P D
T J , T stg
50 c
48 c
100
35
61.25
83.3
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient b
Junction-to-Case
t ≤ 10 sec
Steady State
R thJA
R thJC
18
40
1.5
22
50
1.8
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. Surface Mounted on 1" FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72669
S-71661-Rev. E, 06-Aug-07
www.vishay.com
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